Technological Innovations to Advance Scalability and Interconnects in Bulk and SOI

نویسندگان

  • Sreedhar Natarajan
  • Andrew Marshall
چکیده

Introduction With technology scaling rapidly, there is increased need for improved performance. While improved performance can be achieved with lower threshold voltages, leakage will be a major issue at technologies below 0.1μm. Interconnect scaling is not expected to keep up with component scaling, resulting in higher capacitance losses and challenges in signal routing. We consider how scaling will impact design for low power and high performance applications. SOI may be a solution for some issues like SER due to the presence of buried oxide. Performance can be enhanced by SOI technology due to the absence of junction capacitance (figure 1). The combination of short gate length technologies and PD-SOI can mitigate performance degradation due to interconnect capacitances and leakage.

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تاریخ انتشار 2001